Title :
CMOS shielded multi-conductor spiral inductor incorporating synthetic edge-coupled transmission lines
Author :
Chiang, Meng-Ju ; Wu, Hsien-Shun ; Lee, Meng-Lin ; Tzuang, Ching-Kuang C.
Author_Institution :
Dept. of Antenna & Wireless Syst. Integration, HTC Corp., Xindian, Taiwan
Abstract :
In this paper, the CMOS shielded multi-conductor spiral inductor using synthetic edge-coupled transmission lines is proposed. The synthetic edge-coupled transmission lines, which are operated in the even-mode, can assist in maintaining the quality factor (Q-factor) and providing spiral inductor with shielding for silicon integration, simultaneously. The prototype is fabricated by using the standard 0.18-¿m 1P6M CMOS technology. The measured results show that the proposed inductor has the maximum Q-factor of 6.5 at 24.0 GHz, which is the same with that of conventional design without shielding ground plane. The prototypes with edge-to-edge spacing of 80.0 ¿m show coupling characteristics of approximately 50.0-to-60.0 dB improvement below 20.0 GHz and 50.0 dB improvements at 24.0 GHz against conventional spiral inductor.
Keywords :
CMOS integrated circuits; elemental semiconductors; inductors; multiconductor transmission lines; silicon; CMOS shielded multiconductor spiral inductor; edge-to-edge spacing; frequency 24 GHz; noise figure 50 dB; quality factor; silicon integration; size 0.18 mum; synthetic edge-coupled transmission lines; CMOS technology; Carbon capture and storage; Couplings; Dielectric substrates; Inductors; Multiconductor transmission lines; Prototypes; Q factor; Silicon; Spirals; Spiral inductor; coupled transmission line; substrate coupling; transmission line;
Conference_Titel :
Microwave Conference, 2009. APMC 2009. Asia Pacific
Conference_Location :
Singapore
Print_ISBN :
978-1-4244-2801-4
Electronic_ISBN :
978-1-4244-2802-1
DOI :
10.1109/APMC.2009.5384504
