Low temperature grown GaAs lossy dielectric heterostructure FET

Author

Lipka, K.-M. ; Splingart, B. ; Westphalen, K. ; Kohn, E. ; Theron, D. ; Boudart, B. ; Salmer, G. ; Pond, L.L. ; Weitzel, C.E.

Author_Institution

Dept. of Electron. Devices & Circuits, Ulm Univ., Germany

fYear

1995

fDate

7-9 Aug 1995

Firstpage

542

Lastpage

551

Abstract

A lossy dielectric FET has been realized and evaluated for the first time by employing σ-LT-GaAs. 3.5 W/mm RF power capability extracted from the DC output characteristics give evidence for a field redistribution which overcomes the power limitation of Schottky gate FET devices. 60 GHz f_max values have been obtained for 1 μm devices. Gate-drain breakdown voltages above 30 V have been identified at 2 GHz in conjunction with a channel sheet charge of 5·10¹² cm^-2. Parasitics, specific to the lossy dielectric have been widely eliminated. However limitations specific to the σ-LT-GaAs material need still to be overcome, which is discussed

Keywords

III-V semiconductors; dielectric thin films; electric breakdown; equivalent circuits; gallium arsenide; microwave field effect transistors; microwave power transistors; molecular beam epitaxial growth; power field effect transistors; 1 micron; 2 GHz; 60 GHz; DC output characteristics; GaAs; RF power capability; channel sheet charge; field redistribution; gate-drain breakdown voltages; lossy dielectric heterostructure FET; parasitics; Dielectric devices; Dielectric losses; Dielectric materials; FETs; Gallium arsenide; Radio frequency; Radiofrequency identification; Schottky gate field effect transistors; Sheet materials; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

High Speed Semiconductor Devices and Circuits, 1995. Proceedings., IEEE/Cornell Conference on Advanced Concepts in

Conference_Location

Ithaca, NY

ISSN

1079-4700

Print_ISBN

0-7803-3970-3

Type

conf

DOI

10.1109/CORNEL.1995.482551

Filename

482551