High quality dry etched InP semiconductor laser facets and characterization using atomic force microscopy

Author

Whaley, R.D. ; Gopalan, B. ; Degenais, M. ; Gomez, R.D. ; Agarwala, S. ; Johnson, F.G. ; King, O. ; Stone, D.R.

Author_Institution

Dept. of Electr. Eng., Maryland Univ., College Park, MD, USA

Volume

1

fYear

1997

fDate

10-13 Nov 1997

Firstpage

11

Abstract

With the use of atomic force microscopy (AFM) we show excellent agreement between theoretical predictions and actual measurements. From this analysis, we have developed a level of confidence in future facet roughness calculations based on data obtained through slope efficiency and far field data. Our rms facet roughness is 220 Å, well below the industrial standard. We have also measured the facet vertically to be 2" which, to our knowledge, is the best to date for methane-based InP laser facet etching

Keywords

III-V semiconductors; atomic force microscopy; etching; indium compounds; optical testing; semiconductor device testing; semiconductor lasers; surface topography; 220 A; InP; atomic force microscopy; facet roughness calculations; far field data; high quality dry etched InP semiconductor laser facets; industrial standard; level of confidence; methane-based InP laser facet etching; rms facet roughness; slope efficiency; Atom lasers; Atomic beams; Atomic force microscopy; Dry etching; Educational institutions; Indium phosphide; Reflectivity; Rough surfaces; Semiconductor lasers; Surface roughness;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society Annual Meeting, 1997. LEOS '97 10th Annual Meeting. Conference Proceedings., IEEE

Conference_Location

San Francisco, CA

ISSN

1092-8081

Print_ISBN

0-7803-3895-2

Type

conf

DOI

10.1109/LEOS.1997.630492

Filename

630492