DocumentCode
317075
Title
High-power 630-nm-band laser diodes
Author
Hiroyama, R. ; Bessho, Y. ; Shono, M. ; Sawada, M. ; Ibaraki, A.
Author_Institution
Microelectron. Res. Center, Sanyo Electr. Co. Ltd., Osaka, Japan
Volume
1
fYear
1997
fDate
10-13 Nov 1997
Firstpage
15
Abstract
In this paper, we report high-power 630-nm-band AlGaInP strain compensated SQW laser diodes demonstrating the high light output power of 72 mW and the high power of 30 mW operation up to 75 C
Keywords
III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; laser transitions; quantum well lasers; 30 mW; 630 nm; 72 mW; 75 C; AlGaInP; AlGaInP strain compensated SQW laser diodes; high light output power; high power; high-power 630-nm-band laser diodes; Absorption; Diode lasers; Laser beams; Light sources; Microelectronics; Power generation; Reflectivity; Temperature dependence; Tensile strain; Threshold current;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Society Annual Meeting, 1997. LEOS '97 10th Annual Meeting. Conference Proceedings., IEEE
Conference_Location
San Francisco, CA
ISSN
1092-8081
Print_ISBN
0-7803-3895-2
Type
conf
DOI
10.1109/LEOS.1997.630494
Filename
630494
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