A 24-GHz SiGe-HBT driver amplifier with 40-dB image-rejection

Author

Masuda, Toru ; Shiramizu, Nobuhiro ; Nakamura, Takahiro ; Washio, Katsuyoshi

Author_Institution

Central Res. Lab., Hitachi, Ltd., Kokubunji, Japan

fYear

2009

fDate

7-10 Dec. 2009

Firstpage

361

Lastpage

364

Abstract

A driver amplifier with a high image-rejection function was developed in 0.18-Â¿m SiGe BiCMOS technology to create a 24-GHz band RF transmitter. The proposed configuration for the driver amplifier uses a notch feedback circuit and a common-emitter amplifier stage and is considered to have a high image-rejection ratio (IRR) and high power-handling capability in the quasi-millimeter-wave frequency region. The driver amplifier obtained a 6.9-dB gain at an operating frequency of 23 GHz and a 40-dB IRR at an image frequency of 16 GHz. Moreover, good large-signal characteristics such as an OP1dB of +0.3 dBm and an OIP3 of +14.5 dBm were achieved simultaneously, while the power consumption was a low 7.2 mW with a 1.5-V power supply.

Keywords

BiCMOS analogue integrated circuits; Ge-Si alloys; heterojunction bipolar transistors; microwave amplifiers; BiCMOS technology; HBT driver amplifier; RF transmitter; SiGe; common-emitter amplifier stage; frequency 16 GHz; frequency 23 GHz; frequency 24 GHz; image-rejection ratio; notch feedback circuit; power 7.2 mW; size 0.18 mum; voltage 1.5 V; BiCMOS integrated circuits; Driver circuits; Energy consumption; Feedback circuits; Germanium silicon alloys; High power amplifiers; Radio frequency; Radiofrequency amplifiers; Silicon germanium; Transmitters; Driver amplifier; SiGe HBT; image-rejection; notch filter;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Conference, 2009. APMC 2009. Asia Pacific

Conference_Location

Singapore

Print_ISBN

978-1-4244-2801-4

Electronic_ISBN

978-1-4244-2802-1

Type

conf

DOI

10.1109/APMC.2009.5384531

Filename

5384531