Linear 1×8 single-mode GaAs VCSEL arrays for 24 Gb/s data rate transmission

Author

Schnitzer, P. ; Jäger, R. ; Jung, C. ; Müller, S. ; Ebeling, K.J.

Author_Institution

Dept. of Optoelectron., Ulm Univ., Germany

Volume

1

fYear

1997

fDate

10-13 Nov 1997

Firstpage

53

Abstract

In summary, we have demonstrated 8×3 Gb/s data transmission with 2³¹-1 PRBS signals. A BER of better than 10^-11 has been achieved and the power penalty for 500 m transmission is about 2.8 dB. The investigated linear 1×8 GaAs VCSEL array shows single-mode, single polarization emission, a very stable emission wavelength and is very well suited for optical interconnection

Keywords

III-V semiconductors; gallium arsenide; laser cavity resonators; laser modes; laser stability; optical interconnections; optical transmitters; semiconductor laser arrays; semiconductor lasers; surface emitting lasers; 24 Gbit/s; 500 m; GaAs; Gb/s data rate transmission; PRBS signals; linear 1×8 GaAs VCSEL array; linear 1×8 single-mode GaAs VCSEL arrays; optical interconnection; optical transmitters; power penalty; single-mode single polarization emission; stable emission wavelength; Bit error rate; Data communication; Gallium arsenide; Optical arrays; Optical fiber polarization; Optical fiber testing; Surface emitting lasers; Threshold current; Threshold voltage; Vertical cavity surface emitting lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society Annual Meeting, 1997. LEOS '97 10th Annual Meeting. Conference Proceedings., IEEE

Conference_Location

San Francisco, CA

ISSN

1092-8081

Print_ISBN

0-7803-3895-2

Type

conf

DOI

10.1109/LEOS.1997.630513

Filename

630513