Room temperature InGaAs-InGaAsP distributed feedback ridge lasers operating beyond 2 μm

Author

Young, M.G. ; Keo, S.A. ; Forouhar, S. ; Turner, T. ; Davis, L. ; Mueller, R. ; Maker, P.D.

Author_Institution

Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA

Volume

1

fYear

1997

fDate

10-13 Nov 1997

Firstpage

73

Abstract

Summary form only given. Recently, a room temperature buried heterostructure DFB laser with an emission wavelength of 2.03 μm was demonstrated. The laser structure was grown with InGaAsP (λ 1.5 μm) barriers which lead to a gain peak at 1.995 μm In this work, we demonstrate that by using InGaAs (λ 1.67 μm) barriers the gain peak of the lasers was extended to 2.03 μm, and by detuning the grating of the DFB, a room temperature CW emission of almost 2.06 μm was achieved

Keywords

III-V semiconductors; distributed feedback lasers; gallium arsenide; gallium compounds; indium compounds; laser transitions; laser tuning; optical transmitters; quantum well lasers; ridge waveguides; waveguide lasers; 1.5 mum; 1.67 mum; 1.995 mum; 2 mum; 2.03 mum; 2.06 mum; InGaAs-InGaAsP; InGaAs-InGaAsP distributed feedback ridge lasers; detuning; emission wavelength; gain peak; laser structure; room temperature; room temperature CW emission; room temperature buried heterostructure DFB laser; Chemical lasers; Distributed feedback devices; Fiber lasers; Gratings; Laser feedback; Laser modes; Quantum well lasers; Space technology; Temperature; Wet etching;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society Annual Meeting, 1997. LEOS '97 10th Annual Meeting. Conference Proceedings., IEEE

Conference_Location

San Francisco, CA

ISSN

1092-8081

Print_ISBN

0-7803-3895-2

Type

conf

DOI

10.1109/LEOS.1997.630523

Filename

630523