DocumentCode
317102
Title
III-V nitride-based lasers
Author
Nakamura, Shuji
Author_Institution
Dept. of Res. & Dev., Nichia Chem. Ind. Ltd., Tokushima, Japan
Volume
1
fYear
1997
fDate
10-13 Nov 1997
Firstpage
79
Abstract
The continuous-wave operation of an InGaN multi-quantum-well structure laser diode was demonstrated at room temperature with a high output power of 50 mW, a high operating temperature of 100°C and a long lifetime of 300 hours
Keywords
III-V semiconductors; gallium compounds; indium compounds; life testing; quantum well lasers; 100 degC; 300 h; 50 mW; III-V nitride-based lasers; InGaN; InGaN multi-quantum-well structure laser diode; continuous-wave operation; high operating temperature; high output power; long lifetime; room temperature; Current measurement; Diode lasers; III-V semiconductor materials; Internet; Pulse measurements; Quantum well devices; Space vector pulse width modulation; Spontaneous emission; Stimulated emission; Temperature dependence;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Society Annual Meeting, 1997. LEOS '97 10th Annual Meeting. Conference Proceedings., IEEE
Conference_Location
San Francisco, CA
ISSN
1092-8081
Print_ISBN
0-7803-3895-2
Type
conf
DOI
10.1109/LEOS.1997.630526
Filename
630526
Link To Document