Title :
AlGaN based UV LEDs and high frequency transistors
Author_Institution :
Univ. of South Carolina, Columbia
Abstract :
We discuss the recent advances in UV optoelectronic and high frequency electronic devices based on the AlGaN material system. The paper addresses the physical, electrical and optical properties of the material system and how they impact the device performance. We also describe the innovative approaches that lead to the solution of the growth and processing problems and thus enable the fabrication of high efficiency optoelectronic and electronic devices.
Keywords :
III-V semiconductors; aluminium compounds; electric properties; light emitting diodes; optical properties; wide band gap semiconductors; AlGaN; AlGaN material system; UV LED; UV optoelectronic devices; electrical properties; high frequency electronic devices; high frequency transistors; optical properties; physical properties; Aluminum gallium nitride; Epitaxial growth; Frequency; Light emitting diodes; Microwave devices; Microwave transistors; Optical device fabrication; Optical materials; Rough surfaces; Surface roughness; AlGaN; detectors; light emitting diodes; microwave transistors;
Conference_Titel :
Physics of Semiconductor Devices, 2007. IWPSD 2007. International Workshop on
Conference_Location :
Mumbai
Print_ISBN :
978-1-4244-1728-5
Electronic_ISBN :
978-1-4244-1728-5
DOI :
10.1109/IWPSD.2007.4472443
