Title :
Dependence of finFET RF performance on fin width
Author :
Lederer, D. ; Parvais, B. ; Mercha, A. ; Collaert, N. ; Jurczak, M. ; Raskin, J. -P ; Decoutere, S.
Author_Institution :
Microwave Lab., Univ. Catholique de Louvain, Louvain-la-Neuve
Abstract :
This work analyzes the radio frequency (RF) performance of 60-nm gate length finFETs, for which the DC behavior exhibits reduced SCE. The RF analysis is carried out as a function of the gate length as well as the fin width (Wfin). Cut off frequencies (ft, f max) on the order of 100 GHz are reported for the first time. It is shown that Wfin has a large impact on those frequencies, due mainly to its effect on the access resistances. Nevertheless, it is also demonstrated that using optimized layout geometry, fmax values close to 170 GHz are to be expected
Keywords :
MOSFET; millimetre wave transistors; 100 GHz; 170 GHz; 60 nm; fin width; finFET RF performance; optimized layout geometry; radio frequency analysis; short channel effect; FinFETs; Fingers; Geometry; Laboratories; Performance analysis; Plasma measurements; RF signals; Radio frequency; Semiconductor device modeling; Signal analysis;
Conference_Titel :
Silicon Monolithic Integrated Circuits in RF Systems, 2006. Digest of Papers. 2006 Topical Meeting on
Conference_Location :
San Diego, CA
Print_ISBN :
0-7803-9472-0
DOI :
10.1109/SMIC.2005.1587887
