Novel dynamic bias control of electroabsorption waveguide modulator

Author

Li, G.L. ; Welstand, R.B. ; Chen, W.X. ; Zhu, J.T. ; Pappert, S. ; Sun, C.K. ; Liu, Y.Z. ; Yu, P.K.L.

Author_Institution

Dept. of Electr. & Comput. Eng., California Univ., San Diego, La Jolla, CA, USA

Volume

1

fYear

1997

fDate

10-13 Nov 1997

Firstpage

140

Abstract

By finding the bias voltage V one can track the optimum bias, VRF-max, for maximum RF efficiency. This concept suggests a new approach to dynamically control the modulator bias for maintaining maximum RF link gain under changing operation conditions. In this work we show that V dynamically tracks VRFmax and thus can be used for controlling the modulator bias voltage for maximum RF efficiency. InGaAsP-InP Franz-Keldysh effect waveguide modulators are used in the measurements

Keywords

III-V semiconductors; electro-optical modulation; electroabsorption; gallium arsenide; gallium compounds; indium compounds; integrated optics; optical communication equipment; optical waveguides; InGaAsP-InP; InGaAsP-lnP Franz-Keldysh effect waveguide modulators; VRF-max; bias voltage; changing operation conditions; dynamic bias control; dynamically control; dynamically tracks; electroabsorption waveguide modulator; maximum RF efficiency; maximum RF link gain; modulator bias; modulator bias voltage; optimum bias; Gain measurement; Optical modulation; Optical polarization; Optical waveguides; Photonic band gap; Radio frequency; Tellurium; Temperature; Virtual manufacturing; Wavelength measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society Annual Meeting, 1997. LEOS '97 10th Annual Meeting. Conference Proceedings., IEEE

Conference_Location

San Francisco, CA

ISSN

1092-8081

Print_ISBN

0-7803-3895-2

Type

conf

DOI

10.1109/LEOS.1997.630558

Filename

630558