Advances in InAsSb-based mid-infrared lasers and LEDs, grown by MOCVD

Author

Kurtz, Steven R. ; Allerman, Andrew A. ; Biefeld, Robert M.

Author_Institution

Sandia Nat. Labs., Albuquerque, NM, USA

Volume

1

fYear

1997

fDate

10-13 Nov 1997

Firstpage

154

Abstract

Summary form only given. We present results for multi-stage, multi-color infrared LEDs where each stage has a separate semimetal injector, and the composition of the strained InAsSb multi-quantum well active region differs in each stage. To demonstrate the feasibility of a semimetal injection laser, we have constructed a single-stage laser emitting at 3.9 μm at 210 K

Keywords

III-V semiconductors; colour; indium compounds; infrared sources; laser transitions; light emitting diodes; quantum well lasers; semiconductor growth; semiconductor quantum wells; vapour phase epitaxial growth; 210 K; 3.9 mum; InAsSb; InAsSb-based mid-infrared lasers; LEDs; MOCVD; multi-stage multi-color infrared LEDs; semimetal injection laser; semimetal injector; single-stage laser; strained InAsSb multi-quantum well active region; Laboratories; Laser sintering; Light emitting diodes; MOCVD; Optical devices; Optical scattering; Pump lasers; Quantum well lasers; Spontaneous emission; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society Annual Meeting, 1997. LEOS '97 10th Annual Meeting. Conference Proceedings., IEEE

Conference_Location

San Francisco, CA

ISSN

1092-8081

Print_ISBN

0-7803-3895-2

Type

conf

DOI

10.1109/LEOS.1997.630564

Filename

630564