Title :
High-speed wafer-fused photodetectors
Author :
Hawkins, Aaron R. ; Bowers, John E.
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
Abstract :
Summary form only given. Advances in optical transmission systems have created needs for higher performance detectors on their receiving end. Three requirements that have driven detector design have been lower cost, higher sensitivity, and wavelength selectivity. To meet each of these challenges, a new fabrication technique called wafer fusion has been used. Cost issues have been addressed by using fusion to integrate InGaAs on Si with the aim of eventual integration with VLSI circuitry
Keywords :
III-V semiconductors; VLSI; gallium arsenide; indium compounds; integrated circuit technology; integrated optoelectronics; optical fabrication; optical receivers; photodetectors; sensitivity; silicon; wafer bonding; IOE; InGaAs; Si; VLSI circuitry; detector design; fabrication technique; high-speed wafer-fused photodetectors; higher performance detectors; higher sensitivity; lower cost; optical transmission systems; receiving end; wafer fusion; wavelength selectivity; Absorption; Circuits; Costs; Detectors; Gallium arsenide; Indium gallium arsenide; Mirrors; Optical receivers; PIN photodiodes; Photodetectors;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1997. LEOS '97 10th Annual Meeting. Conference Proceedings., IEEE
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-3895-2
DOI :
10.1109/LEOS.1997.630568
