High-speed wafer-fused photodetectors

Author

Hawkins, Aaron R. ; Bowers, John E.

Author_Institution

Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA

Volume

1

fYear

1997

fDate

10-13 Nov 1997

Firstpage

162

Abstract

Summary form only given. Advances in optical transmission systems have created needs for higher performance detectors on their receiving end. Three requirements that have driven detector design have been lower cost, higher sensitivity, and wavelength selectivity. To meet each of these challenges, a new fabrication technique called wafer fusion has been used. Cost issues have been addressed by using fusion to integrate InGaAs on Si with the aim of eventual integration with VLSI circuitry

Keywords

III-V semiconductors; VLSI; gallium arsenide; indium compounds; integrated circuit technology; integrated optoelectronics; optical fabrication; optical receivers; photodetectors; sensitivity; silicon; wafer bonding; IOE; InGaAs; Si; VLSI circuitry; detector design; fabrication technique; high-speed wafer-fused photodetectors; higher performance detectors; higher sensitivity; lower cost; optical transmission systems; receiving end; wafer fusion; wavelength selectivity; Absorption; Circuits; Costs; Detectors; Gallium arsenide; Indium gallium arsenide; Mirrors; Optical receivers; PIN photodiodes; Photodetectors;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society Annual Meeting, 1997. LEOS '97 10th Annual Meeting. Conference Proceedings., IEEE

Conference_Location

San Francisco, CA

ISSN

1092-8081

Print_ISBN

0-7803-3895-2

Type

conf

DOI

10.1109/LEOS.1997.630568

Filename

630568