Novel asymmetric Fabry-Perot all-optical switch with 7 nm bandwidth for sub-pJ pump pulses

Author

Akiyama, T. ; Tsuchiya, M. ; Kamiya, T.

Author_Institution

Dept. of Electron. Eng., Tokyo Univ., Japan

Volume

1

fYear

1997

fDate

10-13 Nov 1997

Firstpage

188

Abstract

We report on all-optical switching characteristics of a novel low temperature grown asymmetric Fabry-Perot (AFP) InGaAs-InAlAs MQW saturable absorber device, in which improvement of performance with respect to conventional AFP all-optical switches is provided by coupled and short cavity configurations. SubpJ pump pulse (-800 fJ) operation is realized with fairly high contrast ratio (-10 dB) over a broad bandwidth (-7 nm)

Keywords

III-V semiconductors; gallium arsenide; high-speed optical techniques; indium compounds; molecular beam epitaxial growth; optical communication equipment; optical pumping; optical resonators; optical saturable absorption; optical switches; semiconductor growth; semiconductor quantum wells; symmetry; time division multiplexing; 800 fJ; Fabry-Perot InGaAs-InAlAs MQW saturable absorber; InGaAs-InAlAs; all-optical switching characteristics; asymmetric Fabry-Perot all-optical switch; broad bandwidth; coupled cavity configurations; high contrast ratio; low temperature grown; short cavity configurations; sub-pJ pump pulses; subpJ pump pulse; Bandwidth; Demultiplexing; Dielectric substrates; Fabry-Perot; Impedance matching; Optical pulses; Page description languages; Reflectivity; Switches; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society Annual Meeting, 1997. LEOS '97 10th Annual Meeting. Conference Proceedings., IEEE

Conference_Location

San Francisco, CA

ISSN

1092-8081

Print_ISBN

0-7803-3895-2

Type

conf

DOI

10.1109/LEOS.1997.630579

Filename

630579