Silicon foundry technology for RF products

In this paper we review silicon foundry technology for the realization of highly integrated RF and analog products including wireless transceivers, TV tuners, power amplifiers and emerging mm-wave ICs. A 0.18mum platform is presented that includes modular features such as 200GHz SiGe NPNs, 30GHz RF LDMOS, 18GHz VPNP, 5.6fF/mum² MIM capacitors, 6mum thick Al inductor metal and 8-40V extended drain high-voltage CMOS for power management and control. A next generation platform is described that extends these features to 0.13mum applying a cost-effective SiGe NPN integration to result in a 0.13mum SiGe BiCMOS process with equivalent mask-count to more conventional 0.13mum RF CMOS while supporting multiple SiGe transistors with speeds up to 100GHz