110 GHz slow-wave electrodes for velocity-matched distributed MSM photodetectors with integrated bias load

Author

Pfitzenmaier, H. ; Buttcher, E.H. ; Dröge, E. ; Bimberg, D.

Author_Institution

Inst. fur Festkorperphys. I, Tech. Univ. Berlin, Germany

Volume

1

fYear

1997

fDate

10-13 Nov 1997

Firstpage

218

Abstract

In conclusion, we have demonstrated slow-wave electrodes with input termination for use in InP-based distributed MSM photodetectors. The input termination has been realized by monolithically integrated thin film resistors and capacitors acting as a bias load. The velocity matching obtained is nearly perfect. A large return loss of 15 dB at 110 GHz has been achieved for the bias load

Keywords

III-V semiconductors; electrodes; indium compounds; metal-semiconductor-metal structures; optical films; optical losses; photodetectors; resistors; thin film capacitors; 110 GHz; 15 dB; GHz slow-wave electrodes; InP-based distributed MSM photodetectors; capacitors; input termination; integrated bias load; large return loss; monolithically integrated thin film resistors; velocity matching; velocity-matched distributed MSM photodetectors; Coplanar waveguides; Electrodes; Frequency; Impedance; MIM capacitors; Optical distortion; Optical mixing; Optical waveguides; Photodetectors; Resistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society Annual Meeting, 1997. LEOS '97 10th Annual Meeting. Conference Proceedings., IEEE

Conference_Location

San Francisco, CA

ISSN

1092-8081

Print_ISBN

0-7803-3895-2

Type

conf

DOI

10.1109/LEOS.1997.630593

Filename

630593