Title :
Performance enhancement of the tunnel field effect transistor using a SiGe source
Author :
Patel, Nayan B. ; Ramesha, A. ; Mahapatra, Santanu
Author_Institution :
Indian Inst. of Sci., Bangalore
Abstract :
Due to extremely low off state current (IOFF) and excellent sub-threshold characteristics, the tunnel field effect transistor (TFET) has attracted a lot of attention for low standby power applications. In this work, we aim to increase the on state current (ION) of the device. A novel device architecture with a SiGe source is proposed. The proposed structure shows an order of improvement in ION compared to the conventional Si structure. A process flow adaptable to conventional CMOS technology is also addressed.
Keywords :
CMOS integrated circuits; Ge-Si alloys; emergency power supply; field effect transistors; semiconductor materials; CMOS technology; SiGe; device architecture; low standby power applications; off state current; performance enhancement; process flow; state current; subthreshold characteristics; tunnel field effect transistor; CMOS process; CMOS technology; FETs; Germanium silicon alloys; High K dielectric materials; High-K gate dielectrics; MOSFET circuits; Silicon germanium; Threshold voltage; Tunneling; Sub-threshold swing; band to band tunneling; device simulation; gated p-i-n diode; tunnel field effect transistor (TFET);
Conference_Titel :
Physics of Semiconductor Devices, 2007. IWPSD 2007. International Workshop on
Conference_Location :
Mumbai
Print_ISBN :
978-1-4244-1728-5
Electronic_ISBN :
978-1-4244-1728-5
DOI :
10.1109/IWPSD.2007.4472465
