DocumentCode :
3171589
Title :
A design methodology for efficiency improvement of CMOS class-E power amplifiers
Author :
Wen An Tsou ; Che Sheng Chen ; Chun Kai Wang ; Kuei Ann Wen
Author_Institution :
Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
fYear :
2009
fDate :
3-6 Nov. 2009
Firstpage :
253
Lastpage :
256
Abstract :
This paper presents an analysis on efficiency improvement of class-E power amplifiers (PAs) with Microelectromechanical systems (MEMS) inductors. The efficiency can be improved and has been demonstrated by using MEMS inductors. The proposed MEMS technology is validated by a prototype MEMS inductor. Also, the simulation result of MEMS inductors by HFSS have good match with the measured result. The stacked-metal layer inductors implemented in MEMS process are developed for increasing the quality factor. The simulation result of a CMOS class-E PA with MEMS inductors shows that the increased quality factor of inductors by 2 can improve the drain efficiency by 6%. Therefore, we present a design methodology that can improve the efficiency of PAs by optimizing the quality factor of fully integrated inductors.
Keywords :
CMOS analogue integrated circuits; Q-factor; UHF power amplifiers; field effect MMIC; inductors; micromechanical devices; CMOS class-E power amplifiers; MEMS; design methodology; drain efficiency; inductors; microelectromechanical systems; quality factor; stacked-metal layer inductors; MEMS inductors; power amplifiers; power efficiency; quality factor;
fLanguage :
English
Publisher :
iet
Conference_Titel :
Microwave Technology and Computational Electromagnetics, 2009. ICMTCE. International Conference on
Conference_Location :
Beijing
Print_ISBN :
978-1-84919-140-1
Type :
conf
DOI :
10.1049/cp.2009.1314
Filename :
5521268
Link To Document :
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