DocumentCode :
3171699
Title :
A simulation methodology for the operational life time study of deep sub-micron technology integrated circuits using channel length dependent NBTI model
Author :
Mooraka, Rammohan ; ManjulaRani, K.N. ; Ho, Dung ; Mathur, Nitish ; Puchner, Helmut
Author_Institution :
Compact Modeling Group of Cypress Semicond., Lexington
fYear :
2007
fDate :
16-20 Dec. 2007
Firstpage :
146
Lastpage :
149
Abstract :
Negative Bias Temperature Instability (NBTI) is one of the key reliability issues for deep sub-micron semiconductor technologies. In this paper, geometry dependence on the NBTI performance of the PMOS FET is studied by conducting measurements on different FET geometries from a 65 nm CMOS technology. A channel length dependent NBTI model is derived based on this characterized data at different stress voltages. A simulation methodology is developed by implementing this model in the industry standard circuit simulator Mentor-Eldo with the User defined reliability model (UDRM) feature. This methodology is used to simulate the changes in the critical path delay of 65 nm high-speed SRAM memory products and to derive the guidelines for robust SRAM cell FET design against static noise margin (SNM) variations due to NBTI.
Keywords :
CMOS integrated circuits; SRAM chips; integrated circuit modelling; integrated circuit noise; integrated circuit reliability; CMOS technology; IC reliability; PMOSFET; channel length dependent NBTI model; deep submicron technology integrated circuit; industry standard circuit simulator; negative bias temperature instability; operational life time; simulation methodology; size 65 nm; user defined reliability model; CMOS technology; Circuit simulation; FETs; Geometry; Integrated circuit modeling; Integrated circuit technology; Niobium compounds; Random access memory; Semiconductor device modeling; Titanium compounds; Eldo simulation; SRAM static noise margin; Semiconductor device reliability; User defined reliability model;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Physics of Semiconductor Devices, 2007. IWPSD 2007. International Workshop on
Conference_Location :
Mumbai
Print_ISBN :
978-1-4244-1728-5
Electronic_ISBN :
978-1-4244-1728-5
Type :
conf
DOI :
10.1109/IWPSD.2007.4472474
Filename :
4472474
Link To Document :
بازگشت