Title :
RF CMOS linearity analysis using harmonic balance device simulation
Author :
Kopalle, Deepika ; Niu, Guofu ; Taylor, Stewart S.
Author_Institution :
Dept. of Electr. & Comput. Eng., Auburn Univ., AL
Abstract :
Intermodulation linearity of CMOS transistors obtained from device level harmonic balance simulation is compared to that obtained using I-V data and good agreement between the two approaches is observed. Linearity is simulated as a function of channel length and oxide thickness. The impact of poly-gate depletion effect on linearity is also analyzed
Keywords :
CMOS integrated circuits; linearisation techniques; microwave transistors; radiofrequency integrated circuits; CMOS transistors; I-V data; RF CMOS linearity analysis; channel length; harmonic balance device simulation; intermodulation linearity; oxide thickness; poly-gate depletion effect; Analytical models; Circuit simulation; Computational modeling; Computer simulation; Data engineering; Harmonic analysis; Linearity; MOSFET circuits; Power generation; Radio frequency;
Conference_Titel :
Silicon Monolithic Integrated Circuits in RF Systems, 2006. Digest of Papers. 2006 Topical Meeting on
Conference_Location :
San Diego, CA
Print_ISBN :
0-7803-9472-0
DOI :
10.1109/SMIC.2005.1587909
