Title :
RF performance of process-induced strain-engineered n-MOSFETs
Author :
Maiti, T.K. ; Mahato, S.S. ; Chakraborty, P. ; Sarkar, S.K. ; Maiti, C.K.
Author_Institution :
IIT Kharagpur, Kharagpur
Abstract :
Results of high frequency performance studies using technology CAD (TCAD) of process-induced strain- engineered n-MOSFETs with channel lengths down to 40 nm is reported. Uniaxial tensile stress induced in the channel using stressed contact liners were found to significantly improve ac performance, predicting a maximum oscillation frequency, fmax as high as 450 GHz. A record high cutoff frequency, fT of 380 GHz has been obtained in simulation, which, however, needs to be verified experimentally.
Keywords :
MOSFET; electronic engineering computing; technology CAD (electronics); RF performance; frequency 380 GHz; frequency 450 GHz; high frequency performance studies; process-induced strain-engineered n-MOSFET; technology CAD; uniaxial tensile stress; Analytical models; Computational modeling; Cutoff frequency; MOSFET circuits; Predictive models; Radio frequency; Scattering; Tensile strain; Tensile stress; Transconductance; Process-induced strain; RF performance; Smith chart; Strain-engineered MOSFET;
Conference_Titel :
Physics of Semiconductor Devices, 2007. IWPSD 2007. International Workshop on
Conference_Location :
Mumbai
Print_ISBN :
978-1-4244-1728-5
Electronic_ISBN :
978-1-4244-1728-5
DOI :
10.1109/IWPSD.2007.4472476
