Mobile space charge effect in 4H Silicon Carbide IMPATT diodes

Author

Mukhopadhyay, S. ; Banerjee, Soumen ; Mukhopadhyay, J. ; Banerjee, J.P.

Author_Institution

Univ. of Calcutta, Kolkata

fYear

2007

fDate

16-20 Dec. 2007

Firstpage

268

Lastpage

272

Abstract

The effect of mobile space charge in the depletion layer of 4H SiC p⁺nn⁺ IMPATT diode has been investigated through computer simulation method. The simulation is based on drift-diffusion model to study DC properties of the device at different bias current densities. The device is designed to operate at millimeter wave frequencies. It is observed that a maximum DC to microwave conversion efficiency of 22.82% is obtained at a bias current density of 4.4times10⁷ A.m². The DC to microwave conversion efficiency of Read and Quasi Read High-low SDR diodes has also been estimated and compared with that of flat profile p⁺nn⁺ diode at the same bias current density of 4.4times10⁷ A.m².

Keywords

IMPATT diodes; current density; microwave diodes; millimetre wave diodes; semiconductor device models; silicon compounds; space charge; 4H IMPATT diodes; Quasi Read High-low SDR diodes; Read diodes; SiC; current density; depletion layer; device DC properties; drift-diffusion model; flat profile diode; microwave conversion efficiency; millimeter wave device; mobile space charge effect; Computational modeling; Computer simulation; Current density; Diodes; Microwave devices; Millimeter wave devices; Millimeter wave technology; Mobile computing; Silicon carbide; Space charge; 4H Silicon Carbide; Conversion efficiecy; Drift-diffusion model; Mobile space charge effect;

fLanguage

English

Publisher

ieee

Conference_Titel

Physics of Semiconductor Devices, 2007. IWPSD 2007. International Workshop on

Conference_Location

Mumbai

Print_ISBN

978-1-4244-1728-5

Electronic_ISBN

978-1-4244-1728-5

Type

conf

DOI

10.1109/IWPSD.2007.4472497

Filename

4472497