DocumentCode
317223
Title
Asymmetric diamines as thermally stable hole transporters in organic light emitting devices, synthesis and characterization
Author
Loy, Doug E. ; Koene, Bryan E. ; Thompson, Mark E.
Author_Institution
Univ. of Southern California, Los Angeles, CA, USA
Volume
1
fYear
1997
fDate
10-13 Nov 1997
Firstpage
364
Abstract
One of the major causes of device degradation in organic thin film devices is the thermal instability of the hole transporting layer. In vacuum deposited organic light emitting devices (OLEDs) this layer usually consists of a biphenyl diamine such as TPD, which is a biphenyl that has a phenyl tolyl amine moiety at both ends. TPD has a glass transition temperature (Tg) of about 60 C. Devices made with TPD show catastrophic failure when the device is heated to near the Tg. In our efforts to design thermally stable hole transporters, as well as to understand how chemical structure relates to Tg, we have synthesized a variety of asymmetric biphenyl amines. These amines consist of a triaryl amine attached at one end of a biphenyl along with a different triaryl amine at the other end of the biphenyl
Keywords
glass transition; hole mobility; luminescent devices; optical fabrication; optical films; optical materials; organic compounds; reliability; thin film devices; TPD; asymmetric biphenyl amines; asymmetric diamines; biphenyl; biphenyl diamine; catastrophic failure; chemical structure; device degradation; glass transition temperature; hole transporting layer; organic light emitting device synthesis; organic thin film devices; phenyl tolyl amine moiety; thermal instability; thermally stable hole transporter design; thermally stable hole transporters; triaryl amine; vacuum deposited organic light emitting devices; Amorphous materials; Chemicals; Crystallization; Glass; Impurities; Organic light emitting diodes; Temperature; Thermal degradation;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Society Annual Meeting, 1997. LEOS '97 10th Annual Meeting. Conference Proceedings., IEEE
Conference_Location
San Francisco, CA
ISSN
1092-8081
Print_ISBN
0-7803-3895-2
Type
conf
DOI
10.1109/LEOS.1997.630669
Filename
630669
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