DocumentCode
3172379
Title
InAlN - A new barrier material for GaN-based HEMTs
Author
Kohn, Erhard ; Medjdoub, Farid
Author_Institution
Univ. of Ulm, Ulm
fYear
2007
fDate
16-20 Dec. 2007
Firstpage
311
Lastpage
316
Abstract
The InAlN/GaN heterojunction is a new alternative to the common AlGaN/GaN configuration with high sheet charge density and high thermal stability, promising very high power and temperature performance as well as robustness. The status, focussing on the lattice matched materials configuration is reviewed.
Keywords
III-V semiconductors; aluminium compounds; gallium compounds; high electron mobility transistors; indium compounds; thermal stability; wide band gap semiconductors; HEMT; InAlN-GaN; barrier material; lattice matched materials configuration; sheet charge density; thermal stability; Aluminum gallium nitride; Gallium nitride; HEMTs; Heterojunctions; Lattices; MODFETs; Robust stability; Sheet materials; Temperature; Thermal stability; High temperature electronics; III-nitrides; InAlN/GaN heterostructure; high power devices;
fLanguage
English
Publisher
ieee
Conference_Titel
Physics of Semiconductor Devices, 2007. IWPSD 2007. International Workshop on
Conference_Location
Mumbai
Print_ISBN
978-1-4244-1728-5
Electronic_ISBN
978-1-4244-1728-5
Type
conf
DOI
10.1109/IWPSD.2007.4472506
Filename
4472506
Link To Document