Accurate modelling of electro-optic effects in coupled quantum well structures

Author

Chen, X. ; Earnshaw, M.P. ; Bhatnagar, A. ; Batty, W. ; Allsopp, D.W.E.

Author_Institution

Dept. of Electron., York Univ., UK

Volume

1

fYear

1997

fDate

10-13 Nov 1997

Firstpage

405

Abstract

This paper reports a study of electroabsorption in GaAs-AlGaAs coupled quantum wells comparing spectra obtained from a variational model with those obtained using the excitonic Green´s function (EGF) approach of Chuang et al [see, Phys. Rev. B, vol. 43, p. 1500, 1991] validating the results, where possible, by further comparison with experiment. The single band electron and hole wave functions and energy levels used to calculate the excitonic wave functions in either the variational or EGF model are found numerically for any arbitrary CQW structure

Keywords

Green´s function methods; aluminium compounds; electro-optical modulation; electroabsorption; energy states; excitons; gallium arsenide; optical couplers; semiconductor device models; semiconductor quantum wells; variational techniques; GaAs-AlGaAs; GaAs-AlGaAs coupled quantum wells; accurate modelling; arbitrary CQW structure; coupled quantum well structures; electro-optic effects; electroabsorption; energy levels; excitonic Green´s function; excitonic wave functions; hole wave functions; single band electron wave functions; variational model; Absorption; Artificial intelligence; Charge carrier processes; Current measurement; Energy measurement; Excitons; Gallium arsenide; Oscillators; Photoconductivity; Predictive models;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society Annual Meeting, 1997. LEOS '97 10th Annual Meeting. Conference Proceedings., IEEE

Conference_Location

San Francisco, CA

ISSN

1092-8081

Print_ISBN

0-7803-3895-2

Type

conf

DOI

10.1109/LEOS.1997.630692

Filename

630692