DocumentCode :
3172430
Title :
Observation of stress-induced voiding with an ultra-high voltage electron microscope
Author :
Tanikawa, A. ; Okabayashi, H. ; Mori, H. ; Fujita, H.
Author_Institution :
NEC Corp., Kanagawa, Japan
fYear :
1990
fDate :
27-29 March 1990
Firstpage :
209
Lastpage :
215
Abstract :
An investigation of stress-induced voiding at temperatures 400 to 500 degrees C in passivated Al metallizations (0.5 by 1 mu m wide) with a bamboo grain structure by ultra-high voltage (2 MV) electron microscopy is discussed. Emphasis is placed on the study of nucleation and growth of voids. Conventional and in situ observations of initial stages of voiding indicate that voids start not only at grain boundaries (GBs), but also at passivation/Al interfaces with no GBs. Void growth toward the Al metallization with direction, however, is always associated with GBs. From the observed results it is suggested that dislocation glide as well as GBs may play a role in voiding at the temperature range studied.<>
Keywords :
VLSI; aluminium; crack detection; electron microscope examination of materials; failure analysis; metallisation; nondestructive testing; passivation; 0.5 micron; 1 micron; 2 MV; 400 to 500 degC; UHVEM; bamboo grain structure; dislocation glide; grain boundaries; growth of voids; in situ observations; initial stages of voiding; passivated Al metallizations; passivation/Al interfaces; stress-induced voiding; study of nucleation; temperature range; ultra-high voltage electron microscope; Annealing; Artificial intelligence; Electron microscopy; Grain boundaries; Metallization; Optical microscopy; Passivation; Scanning electron microscopy; Transmission electron microscopy; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Reliability Physics Symposium, 1990. 28th Annual Proceedings., International
Conference_Location :
New Orleans, LA, USA
Type :
conf
DOI :
10.1109/RELPHY.1990.66088
Filename :
66088
Link To Document :
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