Effect of high carrier injection on the performance of a mid-infrared DH-LED

Author

Sanjeev ; Chakrabarti, P.

Author_Institution

MJP Rohilkhand Univ., Bareilly

fYear

2007

fDate

16-20 Dec. 2007

Firstpage

369

Lastpage

372

Abstract

In this paper we present a simple analytical approach to determine the effect of high-level injection on the performance of a double heterostructure light emitting diode (DH-LED) suitable for use as a source in absorption gas spectroscopy and/ or in a futuristic optical fiber communication system in the mid-infrared spectral region at room temperature. The effect of high injection on the lifetime of the carriers (both radiative and non-radiative) and carrier confinement in heterostructure has been simulated analytically. It has been seen that an overall reduction in the carrier lifetime and carrier confinement under high injection actually reduces the quantum efficiency and limit the power output.

Keywords

carrier lifetime; light emitting diodes; absorption gas spectroscopy; carrier confinement; carrier lifetime; double heterostructure light emitting diode; high carrier injection; midinfrared spectral region; optical fiber communication system; Absorption; Carrier confinement; Heterojunctions; Light emitting diodes; Optical fiber communication; Photonic band gap; Radiative recombination; Spectroscopy; Substrates; Temperature; DH-LED; high carrier injection; mid-infrared;

fLanguage

English

Publisher

ieee

Conference_Titel

Physics of Semiconductor Devices, 2007. IWPSD 2007. International Workshop on

Conference_Location

Mumbai

Print_ISBN

978-1-4244-1728-5

Electronic_ISBN

978-1-4244-1728-5

Type

conf

DOI

10.1109/IWPSD.2007.4472522

Filename

4472522