Evaluation of 1200 V-Si-IGBTs and 1300 V-SiC-JFETs for application in three-phase very sparse matrix AC-AC converter systems

In this paper based on experimental investigations of the power semiconductor switching behavior and on analytical calculations the conduction and switching losses of it three-phase very sparse AC-AC matrix converter (VSMC) supplying a permanent magnet synchronous motor are discussed in detail. There, 1200 V-Si-IGBTs/1200 V-Si-ultra-fast-recovery diodes and 1300 V-SiC-JFET/Si-MOSFET cascodes are employed for realizing the converter power circuit. The worst case operating conditions are identified and the efficiencies resulting in dependency of the switching frequency and load current amplitude are shown in graphical form. Furthermore, the operating range of the VSMC with respect to the maximum admissible junction temperature of the power semiconductors is determined. Finally, topics to be treated in the continuation of the research are discussed briefly.