DocumentCode
3173196
Title
An analytical model for admittance parameters of GaN MESFET for microwave circuit applications
Author
Kabra, Sneha ; Kaur, H. ; Haldar, S. ; Gupta, M. ; Gupta, R.S.
Author_Institution
Univ. of Delhi South Campus, New Delhi
fYear
2007
fDate
16-20 Dec. 2007
Firstpage
456
Lastpage
458
Abstract
An analytical model of GaN MESFET to evaluate admittance parameters is presented. Frequency dependence of the parasitic capacitances obtained by simulations has been utilized to develop the model. Results have been verified using ATLAS 2D device simulator.
Keywords
MESFET circuits; gallium compounds; microwave circuits; ATLAS 2D device simulator; GaN; MESFET; microwave circuit applications; parameters admittance model; parasitic capacitances; Admittance; Analytical models; Frequency dependence; Gallium nitride; MESFET circuits; Microwave circuits; Parasitic capacitance; Physics; Polynomials; Scattering parameters; GaN MESFET; admittance parameters; frequency dependent capacitance;
fLanguage
English
Publisher
ieee
Conference_Titel
Physics of Semiconductor Devices, 2007. IWPSD 2007. International Workshop on
Conference_Location
Mumbai
Print_ISBN
978-1-4244-1728-5
Electronic_ISBN
978-1-4244-1728-5
Type
conf
DOI
10.1109/IWPSD.2007.4472548
Filename
4472548
Link To Document