Title :
Experimental characterization of insulated gate power components: capacitive aspects
Author :
Lembeye, Y. ; Schanen, J.L. ; Keradec, J.P.
Author_Institution :
Lab. d´´Electrotech., CNRS, Grenoble, France
Abstract :
In this paper, the parasitic capacitive behaviour of insulated gate power modules (MOSFET, IGBT, MCT, etc.) is presented. First, a theory on nonlinear electrostatic quadripoles is developed. Secondly, based on this theory, an original experimental characterization method is presented. Results provide more information than manufacturer datasheets, which makes the method very interesting for designers. Finally, the influence of the two potentials Vce and Vge on capacitor values is analysed at turn on using a simple model of an IGBT
Keywords :
MOS-controlled thyristors; capacitance; insulated gate bipolar transistors; power MOSFET; power bipolar transistors; semiconductor device models; semiconductor device testing; IGBT; MCT; MOSFET; experimental characterization; insulated gate power components; nonlinear electrostatic quadripoles; parasitic capacitive behaviour; Capacitors; Electrostatics; Frequency measurement; Impedance; Insulated gate bipolar transistors; Insulation; MOSFET circuits; Manufacturing; Power MOSFET; Voltage;
Conference_Titel :
Industry Applications Conference, 1997. Thirty-Second IAS Annual Meeting, IAS '97., Conference Record of the 1997 IEEE
Conference_Location :
New Orleans, LA
Print_ISBN :
0-7803-4067-1
DOI :
10.1109/IAS.1997.628980
