Title :
Critical evaluation of IGBT performance in zero current switching environment
Author :
Trivedi, Malay ; Shenai, Krishna ; Larson, Eric
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Illinois Univ., Chicago, IL, USA
Abstract :
This paper reports the internal carrier dynamics of IGBTs under zero current switching conditions. The ZCS performance of a punch-through IGBT is studied with the aid of extensive measurements and numerical simulations. Simulation results are shown to agree with measured waveforms. It is shown that carrier removal in the no-current regime of ZCS turn-off can be utilised to reduce the turn-off power loss of IGBTs in ZCS applications
Keywords :
bipolar transistor switches; insulated gate bipolar transistors; numerical analysis; power bipolar transistors; power semiconductor switches; semiconductor device models; semiconductor device testing; switching; applications; carrier removal; critical performance evaluation; internal carrier dynamics; measured waveforms; measurements; numerical simulations; power IGBTs; punch-through IGBT; turn-off power loss; zero current switching; Circuit testing; Inductors; Insulated gate bipolar transistors; Numerical simulation; Semiconductor devices; Switches; Switching circuits; Temperature; Zero current switching; Zero voltage switching;
Conference_Titel :
Industry Applications Conference, 1997. Thirty-Second IAS Annual Meeting, IAS '97., Conference Record of the 1997 IEEE
Conference_Location :
New Orleans, LA
Print_ISBN :
0-7803-4067-1
DOI :
10.1109/IAS.1997.628981
