Title :
Switching frequency related trade off´s in a hard switching CCM PFC boost convert
Author_Institution :
Infineon Technol. AG, Munich, Germany
Abstract :
The combination of silicon carbide Schottky diodes (thinQ!/sup /spl trade//) and power MOSFET CoolMOS/sup /spl trade// C3 sets a new efficiency benchmark in hard switching circuits like CCM PFC. Much higher switching frequencies become feasible. Trade off between switching frequency, size of the system and power losses in all components will be discussed.
Keywords :
DC-DC power convertors; Schottky diodes; losses; power MOSFET; power factor correction; silicon compounds; switching; wide band gap semiconductors; CCM PFC boost convert; CoolMOS/sup /spl trade//; SiC; power MOSFET; power losses; schottky diodes; switching frequency; system size; Electromagnetic interference; MOSFET circuits; Power semiconductor switches; Schottky diodes; Semiconductor diodes; Silicon carbide; Switched-mode power supply; Switching circuits; Switching converters; Switching frequency;
Conference_Titel :
Applied Power Electronics Conference and Exposition, 2003. APEC '03. Eighteenth Annual IEEE
Conference_Location :
Miami Beach, FL, USA
Print_ISBN :
0-7803-7768-0
DOI :
10.1109/APEC.2003.1179286
