Title :
Investigation of hysteresis memory effects in SOI FinFETs with ONO buried insulator
Author :
Chang, S.J. ; Na, Kyungmin ; Bawedin, M. ; Bae, Y.H. ; Park, K.H. ; Lee, J.H. ; Xiong, W. ; Cristoloveanu, S.
Author_Institution :
IMEP-LAHC, Grenoble INP Minatec, Grenoble, France
Abstract :
Advanced FinFETs fabricated on SOI with ONO BOX are investigated for possible memory applications. Systematic measurements reveal the dynamics of BOX charging and discharging as a function of bias, dimensions, and time. The amount of charge trapped into the ONO dielectric is sensed, via 2D coupling, by the drain current. A strong hysteresis effect, potentially useful for non-volatile memory applications, is observed and discussed.
Keywords :
MOSFET; dielectric hysteresis; silicon-on-insulator; 2D coupling; BOX charging; ONO BOX; ONO buried insulator; ONO dielectric; SOI FinFET; drain current; hysteresis memory effect; nonvolatile memory application; Charge carrier processes; Current measurement; FinFETs; Hysteresis; Logic gates; Noise measurement; Silicon on insulator technology;
Conference_Titel :
SOI Conference (SOI), 2010 IEEE International
Conference_Location :
San Diego, CA
Print_ISBN :
978-1-4244-9130-8
Electronic_ISBN :
1078-621x
DOI :
10.1109/SOI.2010.5641374
