Title :
Process development of GaAs based RF MEMS
Author :
suryanarayana, P. ; Naik, A.A. ; Sridhar, C.H. ; Murthy, V.S. ; Kiran, J. Ravi ; Chaturvedi, Sandeep ; Prasad, S.D. ; Rao, A. V S K ; Muralidharan, R. ; Koul, S.K.
Author_Institution :
Semiconductor Complex Ltd., Hyderabad
Abstract :
GaAs MMIC compatible process for RF MEMS Switch using 7-layered mask set has been developed. Semi- Insulating GaAs is used as substrate. E-beam evaporated 7000 A thick Ti/Pt/Au is used as bottom metal followed by 2.5 mu thick gold plating is used for CPW structure. PECVD nitride is used as field dielectric layer. Sputtered Au metal is used as a beam layer. Different sacrificial layers are tried and Polyimide was found to be good sacrificial layer to realise the air bridge structures. Different sizes of air bridge structures up to 320 microns length and 100 microns width were realised. SEM was extensively used for analyzing beam structure of different dimensions.
Keywords :
MMIC; electron beams; gallium compounds; gold; microswitches; scanning electron microscopy; CPW structure; GaAs; GaAs MMIC compatible; PECVD nitride; RF MEMS switch; SEM; Ti-Pt-Au; air bridge structures; size 100 micron; size 320 micron; substrate; Bridge circuits; Coplanar waveguides; Dielectric substrates; Dielectrics and electrical insulation; Gallium arsenide; Gold; MMICs; Polyimides; Radiofrequency microelectromechanical systems; Switches; GaAs MEMS; RF Switch;
Conference_Titel :
Physics of Semiconductor Devices, 2007. IWPSD 2007. International Workshop on
Conference_Location :
Mumbai
Print_ISBN :
978-1-4244-1728-5
Electronic_ISBN :
978-1-4244-1728-5
DOI :
10.1109/IWPSD.2007.4472616
