Design of a commutation cell of a high power IGBT inverter-the contribution of the simulation

The use of fast semiconductors components in high power inverters implies relatively severe constraints for cabling. Indeed, the turn-off of switches (here IGBT) generates a di/dt of some 2000 A/μs which can create, via parasitic inductances of the commutation cell, prohibitive overvoltages which can became destructive. This paper shows a representative industrial example from which it is now possible to precisely evaluate this parasitic inductance directly from geometrical parameters of connections. The cabling which is used in this industrial application is made using busbar technology according to the power range. The very good agreement between experimental and simulation results shows that it is realistic to widely use modelling to design connections in power electronics