Title :
Recent technologies and trends of power devices
Author :
Majumdar, Gourab
Author_Institution :
Mitsubishi Electr. Corp., Hyogo
Abstract :
In this paper, some key technologies related to advancement of the IGBT module and IPM family, have been reviewed. Changing requirements from various application fields and projections of future technologies related to power modules that can comply with such needs are also discussed highlighting on newer power chip and packaging technologies. In the final part of the paper, discussions on status and possibilities of silicon carbide based power semiconductors for future power conversion applications are also included.
Keywords :
insulated gate bipolar transistors; power semiconductor devices; silicon compounds; IGBT module; IPM family; packaging technologies; power chip technologies; power conversion applications; power devices; power modules; power semiconductors; silicon carbide; Home appliances; Hybrid electric vehicles; Insulated gate bipolar transistors; Inverters; Matrix converters; Multichip modules; Power conversion; Power electronics; Semiconductor device packaging; Silicon carbide; IGBT; IPM; Power Conversion and Power Module;
Conference_Titel :
Physics of Semiconductor Devices, 2007. IWPSD 2007. International Workshop on
Conference_Location :
Mumbai
Print_ISBN :
978-1-4244-1728-5
Electronic_ISBN :
978-1-4244-1728-5
DOI :
10.1109/IWPSD.2007.4472635
