Title :
Novel FLI/ODBR based LDMOSFET: A 2-D simulation study
Author :
Vaid, Rakesh ; Hussain, Asgar ; Trikha, Amit ; Bhushan, Sanjeeva ; Singh, Jaspreet ; Roshan Lai ; Padha, Naresh
Author_Institution :
Univ. of Jammu, Jammu
Abstract :
This paper presents a novel device structure for the LDMOSFET based on FLI (Floating Islands) and ODBR (Opposite Doped Buried Regions) concept The proposed new device achieves approximately 25% increase in the breakdown voltage besides improvements in the electric field and potential distributions in the drift region of the device leading to reduce the on-resistance of the proposed device. The current densities also tend to increase thus making it very attractive for variety of applications in automotive systems and computer peripherals.
Keywords :
current density; electric field effects; power MOSFET; semiconductor device breakdown; semiconductor device models; FLI/ODBR; LDMOSFET; automotive systems; breakdown voltage; computer peripherals; current density; drift region; electric field; floating islands; opposite doped buried regions; potential distributions; Doping; Electric breakdown; Fabrication; Jamming; Low voltage; MOSFET circuits; Power MOSFET; Power amplifiers; Radio frequency; Radiofrequency amplifiers; Floating Islands (FLIs); LDMOSFET; ODBR; Power MOSFET;
Conference_Titel :
Physics of Semiconductor Devices, 2007. IWPSD 2007. International Workshop on
Conference_Location :
Mumbai
Print_ISBN :
978-1-4244-1728-5
Electronic_ISBN :
978-1-4244-1728-5
DOI :
10.1109/IWPSD.2007.4472641
