Title :
Through Silicon Capacitors (TSC) for noise reduction in Power Distribution Network
Author :
Dieng, Khadim ; Artillan, Philippe ; Bermond, Cedric ; Guiller, Olivier ; Lacrevaz, Thierry ; Joblot, Sylvain ; Houzet, Gregory ; Farcy, Alexis ; Lamy, Yann ; Flechet, Bernard
Author_Institution :
IMEP-LAHC, Univ. Savoie Mont Blanc, Le Bourget du Lac, France
Abstract :
Inspired from Through Silicon Vias (TSVs), Through Silicon Capacitors (TSCs) are newly developed and integrated throughout silicon interposers. Thanks to the use of the third dimension in the silicon interposer, TSC technology allows to obtain high capacitance density, up to 56 nF/mm2. This paper deals with a demonstrator to investigate the impact of large matrices of TSCs (13×13 TSCs) on the electrical performance of Power Distribution Networks (PDN). First, the frequency response of TSCs matrix is modeled from DC to 10 GHz. Next, extracted spice models are used to simulate the PDN impedance of a typical processor circuit. Finally a transient analysis is performed to evaluate the performance of the PDN in the time domain. TSCs allow to reduce considerably voltage ripples on the PDN and one obtained less than 10% of voltage ripples for a total capacitance of 1.4 μF.
Keywords :
capacitance; capacitors; electric impedance; integrated circuit interconnections; integrated circuit noise; matrix algebra; silicon; three-dimensional integrated circuits; time-domain analysis; transient analysis; PDN impedance; Spice model; TSC matrix; TSC technology; TSV; capacitance density; noise reduction; power distribution network; silicon interposer; through silicon capacitor; through silicon via; time domain; transient analysis; voltage ripple; Capacitance; Capacitors; Impedance; Microprocessors; Silicon; Through-silicon vias; Transient analysis;
Conference_Titel :
Electronic Components and Technology Conference (ECTC) , 2015 IEEE 65th
Conference_Location :
San Diego, CA
DOI :
10.1109/ECTC.2015.7159600