Stress and bowing engineering in passive silicon interposer

Author

Detalle, Mikael ; Vandevelde, B. ; Nolmans, P. ; Miller, A. ; La Manna, A. ; Beyer, G. ; Beyne, E.

Author_Institution

Imec vzw, Leuven, Belgium

fYear

2015

fDate

26-29 May 2015

Firstpage

287

Lastpage

292

Abstract

Three modifications of the structure of a 4 BEOL layers with 10×100μm TSV Si interposer are proposed to mitigate the tensile stress and release the interposer warpage. By using a thicker compressive PMD layer, reducing Metal1 thickness and using a higher compressive oxide to build the BEOL, the bowing contributions of the TSV, Metal1 and Via2 to Metal4 were reduced by 75%, 37% and 120% respectively. In total, the bowing at wafer level was reduced by 75% after full interposer front side processing.

Keywords

tensile strength; three-dimensional integrated circuits; wafer level packaging; BEOL layer structure; Si; TSV Si interposer; bowing engineering; compressive PMD layer; compressive oxide; interposer warpage; passive silicon interposer; stress engineering; tensile stress mitigation; wafer level; Dielectrics; Residual stresses; Resists; Semiconductor device modeling; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronic Components and Technology Conference (ECTC) , 2015 IEEE 65th

Conference_Location

San Diego, CA

Type

conf

DOI

10.1109/ECTC.2015.7159606

Filename

7159606

Link To Document

https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3175103