DocumentCode
3175362
Title
Correlating the microstructural and photoluminescence properties of ZnO nanoparticles prepared by ball milling
Author
Giri, P.K. ; Singh, Dilip K. ; Kesavamoorthy, R. ; Panigrahi, B.K. ; Nair, K.G.M.
Author_Institution
Indian Inst. of Technol. Guwahati, Guwahati
fYear
2007
fDate
16-20 Dec. 2007
Firstpage
905
Lastpage
908
Abstract
ZnO nanoparticles (NPs) in the size range 7-40 nm have been synthesized by ball milling technique, and microstructural and photoluminescence properties of the NPs are studied by using varieties of techniques. Our results are compared with those of the commercially procured ZnO nanopowders. X-ray diffraction and high resolution transmission electron microscopy studies reveal a compressive strain in the ZnO NPs. Raman studies show broadening and downshift of the ZnO Raman peaks and appearance of a new mode in the milled NPs. UV-visible absorption spectra of milled NPs show enhanced absorption and blue shift of the peak. Room temperature PL spectra show strong emission bands centered at ~380 nm and ~526 nm, and peak profile and intensity these peaks drastically change with increasing milling time. A correlation of the microstructure and photoluminescence properties of NPs is discussed in the light of the quantum size effect and the strain in the NPs.
Keywords
II-VI semiconductors; Raman spectra; X-ray diffraction; ball milling; crystal microstructure; nanoparticles; nanotechnology; photoluminescence; spectral line broadening; spectral line shift; transmission electron microscopy; ultraviolet spectra; visible spectra; zinc compounds; Raman spectra; UV-visible absorption spectra; X-ray diffraction; ZnO; ball milling technique; blue shift; compressive strain; high-resolution transmission electron microscopy; microstructural properties; nanoparticle preparation; photoluminescence properties; quantum size effect; size 7 nm to 40 nm; spectral line broadening; spectral line downshift; temperature 293 K to 298 K; Ball milling; Capacitive sensors; Electromagnetic wave absorption; Microstructure; Nanoparticles; Photoluminescence; Temperature; Transmission electron microscopy; X-ray diffraction; Zinc oxide; Photoluminescence; Raman spectroscopy; Strain; ZnO nanoparticles;
fLanguage
English
Publisher
ieee
Conference_Titel
Physics of Semiconductor Devices, 2007. IWPSD 2007. International Workshop on
Conference_Location
Mumbai
Print_ISBN
978-1-4244-1728-5
Electronic_ISBN
978-1-4244-1728-5
Type
conf
DOI
10.1109/IWPSD.2007.4472669
Filename
4472669
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