Title :
A new method for measuring the coupling coefficient of a split-gate flash EEPROM without an additional test structure
Author :
Fujiwara, H. ; Arimoto, M. ; Kaida, T. ; Sudo, S. ; Kurooka, K. ; Nagasawa, H. ; Hiroshima, T. ; Mameno, K.
Author_Institution :
Microelectron. Res. Center, Sanyo Electr. Co. Ltd., Gifu, Japan
Abstract :
A new method for measuring the actual coupling coefficient of a split-gate flash EEPROM whose floating gate voltage is controlled by the source voltage is presented, which uses no additional test structure or nonfloating gate TEG. In this method, the subthreshold current is measured twice as the source voltage is increased after the control gate transistor has turned on sufficiently. After the drain voltage is slightly altered (ΔV), the subthreshold curve is a·ΔV shifted from the previous one. The coefficient a obtained by this method agrees with the value obtained by the well known subthreshold slope method using a test structure
Keywords :
electric current; flash memories; integrated circuit measurement; integrated memory circuits; control gate transistor; coupling coefficient measurement; drain voltage; floating gate voltage; nonfloating gate TEG; source voltage; split-gate flash EEPROM; subthreshold current; subthreshold curve shift; subthreshold slope method; test structure; Capacitance; Current measurement; EPROM; Electric variables measurement; Microelectronics; Split gate flash memory cells; Subthreshold current; Testing; Threshold voltage; Voltage control;
Conference_Titel :
Microelectronic Test Structures, 2001. ICMTS 2001. Proceedings of the 2001 International Conference on
Conference_Location :
Kobe
Print_ISBN :
0-7803-6511-9
DOI :
10.1109/ICMTS.2001.928635
