Title :
IGBT protection by fuse calculation, behavior and connection
Author :
Duong, S. ; Schanen, J.L. ; Schaeffer, C. ; Sarrus, F. ; De Palma, J.F.
Author_Institution :
Lab. d´´Electrotech. de Grenoble, CNRS, St. Martin d´´Heres, France
Abstract :
The case of the power IGBT may violently explode when the device is in short circuit mode. As the power of the IGBT increases, there is more and more a need for special fast acting fuses for the protection of the IGBT. Studies and power tests show that a specially designed fuse can prevent the IGBT from exploding and keep the circuit impedance below acceptable values. Since the IGBT can operate at frequencies higher than 10 kHz it becomes necessary to evaluate how it can affect the current carrying capability of the fuses. The appropriate curves, data and fuse calculation method are absolutely necessary to allow an accurate fuse selection for the protection against explosion of the IGBT
Keywords :
electric fuses; explosions; insulated gate bipolar transistors; power bipolar transistors; protection; semiconductor device models; semiconductor device testing; circuit impedance; current carrying capability; explosion protection; fast acting fuses; fuse selection; power IGBT protection; Circuit testing; Conducting materials; Conductors; Explosions; Frequency; Fuses; Geometry; Inductance; Insulated gate bipolar transistors; Protection;
Conference_Titel :
Industry Applications Conference, 1997. Thirty-Second IAS Annual Meeting, IAS '97., Conference Record of the 1997 IEEE
Conference_Location :
New Orleans, LA
Print_ISBN :
0-7803-4067-1
DOI :
10.1109/IAS.1997.629016
