Title :
Ultrahigh performance staggered lineup (“Type II”) InP/GaAsSb/InP NpN DHBTs
Author :
Bogonesi, C.R. ; Dvorak, M.W. ; Pitts, O.J. ; Matine, N. ; Watkins, S.P.
Author_Institution :
Compound Semicond. Device Lab., Simon Fraser Univ., Burnaby, BC, Canada
Abstract :
Using a conventional emitter-up triple-mesa process, we have fabricated C-doped InP/GaAsSb/InP double heterojunction bipolar transistors (DHBTs) exhibiting both fT and fMAX=300 GHz while maintaining a breakdown voltage BVCEO =6 V. Our devices feature stable and well-behaved common-emitter DC and RF characteristics up to JC=500 kA/cm2 without any passivation nor heatsinking. InP/GaAsSb/InP abrupt junction DHBTs couple unprecedented performance to apparent manufacturability advantages which should enable applications well beyond 40 Gb/s and challenge InP HEMTs in the 80-100 Gb/s arena
Keywords :
III-V semiconductors; current density; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; microwave bipolar transistors; semiconductor device breakdown; 300 GHz; 40 Gbit/s; 6 V; InP-GaAsSb:C-InP; InP/GaAsSb/InP NpN DHBTs; InP/GaAsSb/InP abrupt junction DHBTs; RF characteristics; breakdown voltage; cutoff frequency; double heterojunction bipolar transistors; emitter-up triple-mesa process; manufacturability advantages; maximum oscillation frequency; stable common-emitter DC characteristics; ultrahigh performance staggered lineup; Cutoff frequency; Doping; Double heterojunction bipolar transistors; HEMTs; Heterojunction bipolar transistors; Indium phosphide; Laboratories; MODFETs; Manufacturing; Semiconductor devices;
Conference_Titel :
Indium Phosphide and Related Materials, 2001. IPRM. IEEE International Conference On
Conference_Location :
Nara
Print_ISBN :
0-7803-6700-6
DOI :
10.1109/ICIPRM.2001.929010
