Title :
Semiconductor photonic waveguide structures made by a reactive beam etching technique
Author :
Oku, Satoshi ; Shibata, Yasuo
Author_Institution :
NTT Photonics Labs., Atsugi, Japan
Abstract :
A Br2-N2 reactive beam etching technique that produces smooth and vertical sidewall etching shapes has been developed and applied to the construction of semiconductor photonic waveguide devices. The low-loss and polarization-insensitive deep-ridge waveguides made by the etching technique have been used to form high performance multimode interference couplers and arrayed waveguide grating filters. Deeply etched submicrometer wide grooves were demonstrated as the surface grating for DFB lasers, which were made without a regrowth process
Keywords :
III-V semiconductors; diffraction gratings; distributed Bragg reflector lasers; distributed feedback lasers; gallium arsenide; indium compounds; integrated optics; optical couplers; optical fabrication; optical losses; optical waveguide filters; optical waveguides; sputter etching; waveguide lasers; Br2-N2; Br2-N2 reactive beam etching technique; DBR lasers; DFB lasers; InP-InGaAs-InP; InP/InGaAs/InP wafer; arrayed waveguide grating filters; deeply etched submicrometer wide grooves; low-loss polarization-insensitive deep-ridge waveguides; multimode interference couplers; semiconductor photonic waveguide structures; smooth vertical sidewall etching shapes; surface grating; Arrayed waveguide gratings; Couplers; Etching; Filters; Interference; Polarization; Semiconductor laser arrays; Semiconductor waveguides; Shape; Structural beams;
Conference_Titel :
Indium Phosphide and Related Materials, 2001. IPRM. IEEE International Conference On
Conference_Location :
Nara
Print_ISBN :
0-7803-6700-6
DOI :
10.1109/ICIPRM.2001.929022