Title :
Carrier dynamics in quantum dots and their application to lasers and microcavity light emitters
Author :
Deppe, D.G. ; Cao, C. ; Shchekin, O.B. ; Zou, Z. ; Chen, H. ; Boggess, T.F. ; Zhang, L. ; Gundogdu, K.
Author_Institution :
Microelectron. Res. Center, Texas Univ., Austin, TX, USA
Abstract :
In this paper we discuss recent experiments performed to characterize the energy relaxation of charge carriers in self-organized QDs. We find several interesting phenomena in these QDs, including a QD size dependence in the relaxation time. While large InGaAs QDs with closely spaced energy levels show relaxation times from the QD wetting layer to the 0-dimensional ground state of ~1 ps, smaller InAs QDs with more widely spaced energy levels show relaxation times of ~7 ps. In addition, an interesting pump dependence exists for the relaxation time (as measured by the radiative emission) for the first excited radiative transition to the ground state transition
Keywords :
III-V semiconductors; carrier relaxation time; excited states; gallium arsenide; ground states; indium compounds; microcavity lasers; photoluminescence; quantum well lasers; semiconductor quantum dots; 0-dimensional ground state; InAs; InAs QDs; InGaAs; InGaAs QDs; QD size dependence; QD wetting layer; charge carrier energy relaxation; closely spaced energy levels; first excited radiative transition; ground state transition; lasers; microcavity light emitters; photoluminescence rise time; pump dependence; radiative emission; relaxation time; self-organized QDs; widely spaced energy levels; Charge carriers; Energy states; Indium gallium arsenide; Laser applications; Light emitting diodes; Microcavities; Quantum dot lasers; Stationary state; Temperature dependence; US Department of Transportation;
Conference_Titel :
Indium Phosphide and Related Materials, 2001. IPRM. IEEE International Conference On
Conference_Location :
Nara
Print_ISBN :
0-7803-6700-6
DOI :
10.1109/ICIPRM.2001.929023