Title :
Room-temperature ground-state lasing using long-wavelength InAs quantum dots on InAlGaAs/InP(311)B
Author :
Saito, Hideaki ; Nishi, Kenichi ; Sugou, Shigeo
Author_Institution :
Syst. Devices & Fundamental Res., NEC Corp., Tsukuba, Japan
Abstract :
Molecular beam epitaxy was used to grow self-assembled InAs quantum dots on InAl(Ga)As buffer layer/InP (311)B substrates. Their area density was a very high 9×1010 cm-2 and their room-temperature photoluminescence emission was at 1.6 μm. Emission intensity and emission linewidth showed little degradation in the temperature range from 77 K to 300 K. We fabricated lasers using five-period stacked InAs quantum-dot layers for the active region, and achieved 1.6-μm ground-state lasing with a low threshold density of 380 A/cm2
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; ground states; indium compounds; molecular beam epitaxial growth; photoluminescence; quantum well lasers; self-assembly; semiconductor quantum dots; spectral line breadth; spectral line intensity; 1.6 mum; 77 to 300 K; InAl(Ga)As buffer layer; InAlGaAs-InP; InAlGaAs/InP(311)B; InAs; InP; InP (311)B substrates; active region; area density; emission intensity; emission linewidth; five-period stacked InAs quantum-dot layers; long-wavelength InAs quantum dots; molecular beam epitaxy; room-temperature ground-state lasing; room-temperature photoluminescence emission; self-assembled InAs quantum dots; threshold density; Gallium arsenide; Indium compounds; Indium phosphide; Molecular beam epitaxial growth; Quantum dot lasers; Quantum dots; Substrates; Temperature; US Department of Transportation; Waveguide lasers;
Conference_Titel :
Indium Phosphide and Related Materials, 2001. IPRM. IEEE International Conference On
Conference_Location :
Nara
Print_ISBN :
0-7803-6700-6
DOI :
10.1109/ICIPRM.2001.929024
