Title :
Analysis on voltage unbalance between the inner and outer devices in three level IGBT converters
Author :
Zheng-Yi, Zhao ; Chang-Jiang, Zhan ; Yu, Han ; Ting, Xie ; Liang-Bing, Zhao
Author_Institution :
Dept. of Electr. Eng., Tsinghua Univ., Beijing, China
Abstract :
In this article, the voltage unbalance between the inner and outer IGBT of the NPC (neutral-point-clamping) three level converter is studied in detail. The keys of this task are to use a method-“step-by-step method” and to understand the basic conception that the parasitic inductance is relevant to the dimension of the loop and the value in proportion. It can be seen that the very reasons for the unbalance are the unique structure of NPC three level circuit and the parasitic inductance in the snubber circuit. Finally the designing tips for testing the snubber circuit are given. The simulation and experimental results demonstrate the validity of the analysis
Keywords :
inductance; insulated gate bipolar transistors; power convertors; snubbers; neutral-point-clamping inverter; parasitic inductance; snubber circuit; step-by-step method; three level IGBT converters; voltage unbalance; Circuit testing; Diodes; Inductance; Insulated gate bipolar transistors; Snubbers; Switches; Switching circuits; Switching converters; Voltage control; Zero voltage switching;
Conference_Titel :
Power Electronics and Drive Systems, 1999. PEDS '99. Proceedings of the IEEE 1999 International Conference on
Print_ISBN :
0-7803-5769-8
DOI :
10.1109/PEDS.1999.794563
