Title :
A monolithic Ka-band HEMT low-noise amplifier
Author :
Yuen, C. ; Nishimoto, C. ; Glenn, M. ; Pao, Y.C. ; Bandy, S. ; Zdasiuk, G.
Author_Institution :
Varian Res. Center, Palo Alto, CA, USA
Abstract :
A monolithic, single-stage high-electron-mobility transistor (HEMT) low-noise amplifier was developed for the 20-40-GHz band. This amplifier includes a single 0.25- mu m-gate-length HEMT active device with on-chip matching and biasing circuits. A gain of approximately 6 dB from 20 to 38 GHz and a noise figure of approximately 5 dB from 26.5 to 38 GHz were measured. The chip size is 2.2 mm*1.1 mm.<>
Keywords :
field effect integrated circuits; high electron mobility transistors; microwave amplifiers; microwave integrated circuits; 0.25 micron; 20 to 40 GHz; 5 dB; 6 dB; HEMT low-noise amplifier; Ka-band; biasing circuits; gain; noise figure; on-chip matching; single-stage high-electron-mobility transistor; Circuit noise; Distributed parameter circuits; Equivalent circuits; Gain measurement; Gallium arsenide; HEMTs; Low-noise amplifiers; Noise figure; Noise measurement; Performance gain;
Conference_Titel :
Microwave Symposium Digest, 1988., IEEE MTT-S International
Conference_Location :
New York, NY, USA
DOI :
10.1109/MWSYM.1988.22023
