Title :
High-power 660-nm AlGaInP laser diodes with a small aspect ratio for the beam divergence
Author :
Hiroyama, R. ; Inoue, D. ; Nomura, Y. ; Shono, M. ; Sawada, M.
Author_Institution :
Microelectron. Res. Center, Sanyo Electr. Co. Ltd., Osaka, Japan
Abstract :
High-power 660-nm AlGaInP laser diodes with a small aspect ratio for beam divergence were successfully fabricated with a window mirror structure. The real index-guided structure was adopted from an investigation into internal loss dependence on the beam divergence in the perpendicular direction. A device with the aspect ration of 1.65 for the beam divergence of 10° and 16.5° in the parallel and perpendicular directions has demonstrated a kink level of 160 mW and maximum light output power of 180 mW, which was limited by thermal saturation. These laser diodes have operated reliably for more than 1500 h at 60°C with a light output power of 90 mW under pulsed condition with a width of 100 ns and frequency of 5 MHz. High-power operation and a small aspect ratio were thus achieved, simultaneously
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; refractive index; semiconductor lasers; 100 ns; 1500 h; 180 mW; 5 MHz; 60 C; 660 nm; 90 mW; AlGaInP; beam divergence; high-power 660-nm AlGaInP laser diodes; internal loss dependence; real index-guided structure; small aspect ratio; thermal saturation; window mirror structure; Absorption; CD recording; Diode lasers; High speed optical techniques; Laser beams; Optical losses; Optical recording; Optical saturation; Power generation; Semiconductor lasers;
Conference_Titel :
Indium Phosphide and Related Materials, 2001. IPRM. IEEE International Conference On
Conference_Location :
Nara
Print_ISBN :
0-7803-6700-6
DOI :
10.1109/ICIPRM.2001.929055