Title :
Strained MQW electro-absorption modulators with high extinction ratio and low capacitance
Author :
Sun, Y. ; Wang, W. ; Chen, W.X. ; Liu, G.L. ; Zhou, F. ; Zhu, H.L.
Author_Institution :
Inst. of Semicond., Acad. Sinica, Beijing, China
Abstract :
We fabricate an electro-absorption modulator for optical network system using a new strategy. The improved modulation properties of the strained InGaAs/InAlAs MQW show it´s polarization independent, high extinction ratio (>40 dB) and low capacitance (C<0.6 pF) which can achieve an ultra-high frequency (>10 GHz). The device is be used in 10 Gbps optical time division multiplex (OTDM) system as a signal generator
Keywords :
III-V semiconductors; aluminium compounds; capacitance; electro-optical modulation; electroabsorption; gallium arsenide; indium compounds; quantum well devices; 0.6 pF; 10 GHz; 10 Gbit/s; InGaAs-InAlAs; InGaAs/InAlAs strained MQW structure; capacitance; electro-absorption modulator; extinction ratio; optical network; optical time division multiplexing; polarization dependence; signal generator; ultra-high-frequency operation; Capacitance; Extinction ratio; Frequency; Indium compounds; Indium gallium arsenide; Optical devices; Optical fiber networks; Optical modulation; Optical polarization; Quantum well devices;
Conference_Titel :
Indium Phosphide and Related Materials, 2001. IPRM. IEEE International Conference On
Conference_Location :
Nara
Print_ISBN :
0-7803-6700-6
DOI :
10.1109/ICIPRM.2001.929060
